An Introduction to Magnetron Sputtering
An Introduction to High Power Pulsed Magnetron Sputtering
Muhammad Yasira, Zhenghua Tana, Seyed Ali Rezvanib,Xuebing Yuanb
a School of Materials Science and Engineering, Huazhong University of Science and Engineering, Wuhan, Hubei, 430074, P.R. China b School of Mechanical Science and Engineering, Huazhong University of Science and Engineering, Wuhan, Hubei, 430074, P.R. China
High power pulsed magnetron sputtering ,namely HPPMS for short, is an emerging technology that is gaining substantial and increasing interest not only in academics but also in industrial processes. HPPMS, also known as HIPIMS (high power impulse magnetron sputtering),？ combining the classical, scalable sputtering technology with pulsed power, is an elegant way of ionizing the sputtered atoms. HIPIMS is a physical vapour vapor deposition technique . The power is applied to the target in pulses of low duty cycle (below 10%) and frequency (below 10 kHz) ,which leads to pulse target power densities of several kW cm-2. Ultra-dense plasmas are obtained, which has unique properties ,such as a high degree of ionization of the sputtered atoms and an off-normal transport of ionized species, with respect to the target. These features lead to the deposition of dense and smooth coatings on complex-shaped substrates ,providing new and added parameters to control the deposition process, tailoring the properties and optimizing the performance of elemental and compound films.
Introduction
Magnetron sputtering has become the process of choice for the deposition of a wide range of industrially important coatings. Compared to other magnetron sputtering , HIPIMS is an exceptionally versatile technique for the deposition of high-quality, well-adhered films,especially when preparing for adhesion enhancing pretreatment of the substrate prior to coating deposition (substrate etching) and deposition of thin films with high microstructure density. Many good-quality coatings have(can)
Muhammad Yasira, Zhenghua Tana, Seyed Ali Rezvanib,Xuebing Yuanb
a School of Materials Science and Engineering, Huazhong University of Science and Engineering, Wuhan, Hubei, 430074, P.R. China b School of Mechanical Science and Engineering, Huazhong University of Science and Engineering, Wuhan, Hubei, 430074, P.R. China
High power pulsed magnetron sputtering ,namely HPPMS for short, is an emerging technology that is gaining substantial and increasing interest not only in academics but also in industrial processes. HPPMS, also known as HIPIMS (high power impulse magnetron sputtering),？ combining the classical, scalable sputtering technology with pulsed power, is an elegant way of ionizing the sputtered atoms. HIPIMS is a physical vapour vapor deposition technique . The power is applied to the target in pulses of low duty cycle (below 10%) and frequency (below 10 kHz) ,which leads to pulse target power densities of several kW cm-2. Ultra-dense plasmas are obtained, which has unique properties ,such as a high degree of ionization of the sputtered atoms and an off-normal transport of ionized species, with respect to the target. These features lead to the deposition of dense and smooth coatings on complex-shaped substrates ,providing new and added parameters to control the deposition process, tailoring the properties and optimizing the performance of elemental and compound films.
Introduction
Magnetron sputtering has become the process of choice for the deposition of a wide range of industrially important coatings. Compared to other magnetron sputtering , HIPIMS is an exceptionally versatile technique for the deposition of high-quality, well-adhered films,especially when preparing for adhesion enhancing pretreatment of the substrate prior to coating deposition (substrate etching) and deposition of thin films with high microstructure density. Many good-quality coatings have(can)
References: 1. .D.M. Mattox, Handbook of Physical Vapor Deposition (PVD) Processing, Noyes Publications, Westwood, 1998. 2. M. Ohring, The Material Science of Thin Films, Academic Press, San Diego, 1992. 3. O. Auciello, R. Kelly, Ion Bombardment Modification of Surfaces: Fundamentals and Applications, Elsevier Science Ltd, Amsterdam, 1984. 4. I. Petrov, P.B. Barna, L. Hultman, J.E. Greene, J. Vac. Sci. Technol. A 21 (2003) S117. Technol. 122 (1999) 290. Technol. A 23 (2005) 18. 8. J. Alami, K. Sarakinos, G. Mark, M.Wuttig, Appl. Phys. Lett. 89 (2006) 154104. 9. S. Kadlec, J. Musil, Vacuum. 307 (1996). 10. A.P. Ehiasarian, P.E. Hovsepian, L. Hultman, U. Helmersson, Thin Solid Films 457 (2004) 270. 11. V. Sittinger, F. Ruske, W. Werner, C. Jacobs, B. Szyszka, D.J. Christie, Thin Solid Films 516 (2007) 5847. 12. E.Wallin, T.I. Selinder, M. Elfwing, U. Helmersson, Europhys. Lett. 82 (2008) 36002. 13. Y. Yamada-Takamura, F. Koch, H.Maier,H. Bolt, Surf. Coat. Technol. 142 (2001) 260. 14. O. Zywitzki, G. Hoetzsch, F. Fietzke, K. Goedicke, Surf. Coat. Technol. 82 (1996) 169. 15. J. Alami, P.O.Å. Persson, J. Böhlmark, J.T. Gudmundsson, D. Music and U. Helmersson, J. Vac. Sci. Technol. A 23 (2005), p. 278. 16. J. Alami, P. Eklund, J.M. Andersson, M. Lattemann, E. Wallin, J. Bolhmark, P. Persson and U. Helmersson, Thin Solid Films 515 (2007), p. 3434. 17. K. Sarakinos, J. Alami and M. Wuttig, J. Phys. D: Appl. Phys. 40 (2007), p. 2108. 18. S. Konstantinidis, A. Hemberg, J.P. Dauchot and M. Hecq, J. Vac. Sci. Technol. B 25 (2007), p. L19. 19. J. Vlcek, A.D. Pajdarova and J. Musil, Contrib. Plasma Phys. 44 (2004), p. 426. 20. M. Ohring: Materials Science of Thin Films(Academic Press, San Diego, 2002). 21. A. Anders: Discharge physics of high power impulse magnetron sputtering. Surf. Coat. Tech. 205, S1 (2011). 24. J. Vlcek, P. Kudlacek, K. Burcalova, and J. Musil: High-power pulsed sputtering using a magnetron with enhanced plasma confinement.J. Vac. Sci. Technol. A25, 42 (2007). 25. K. Burcalova, A. Hecimovic, and A.P. Ehiasarian: Ion-energy distributions and efficiency of sputtering process in HIPIMS system. J. Phys. D41, 115306 (2008). 26. A. Anders, J. Andersson, and A. Ehiasarian: High power impulse magnetron sputtering: Current-voltage-time characteristics indi-cate the onset of sustained self-sputtering. J. Appl. Phys. 102, 113303 (2007). 27. J. Andersson, A.P. Ehiasarian, and A. Anders: Observation of Ti4+ ions in a high power impulse magnetron sputtering plasma. Appl. Phys. Lett.93, 071504 (2008). 28. L.I. Wei, M.A. Zhong-Quan, W. Ye, and W. De-Ming: Optimi-zation of energy scope for titanium nitride films grown by ion beam-assisted deposition.Chin. Phys. Lett. 23, 178 (2006). 29. D.J. Christie: Target material pathways model for high power pulsed magnetron sputtering. J. Vac. Sci. Technol. A 23, 330 (2005). 30. P. Poolcharuansin and J.W. Bradley: Short- and long-term plasma phenomena in a HiPIMS discharge. Plama Sources Sci. Technol. 19, 025010 (2010). 31. S. Konstantinidis, J.P. Dauchot, M. Ganciu, and M. Hecq: Transport of ionized metal atoms in high-power pulsed magnetron discharges assisted by inductively coupled plasma. Appl. Phys.Lett. 88, 021501 (2006). 33. J. Bohlmark, M. Östbye, M. Lattemann, H. Ljungcrantz, T. Rosell, and U. Helmersson: Guiding the deposition fl ux in an ionized magnetron discharge. Thin Solid Films 515, 1928 (2006). 34. A. Mishra, P.J. Kelly, and J.W. Bradley: The evolution of the plasma potential in a HiPIMS discharge and its relationship to deposition rate.Plasma Sources Sci. Technol. 19, 045014 (2010). 35. J. Emmerlich, S. Mráz, R. Snyders, K. Jiang, and J.M. Schneider: The physical reason for the apparently low deposition rate during high power pulsed magnetron sputtering.Vacuum82, 867 (2008).