analog integrated circuit paper from ymca ust
Silicon-Germanium
Heterojunction Bipolar Transistors
--An idea whose time has come
Ankit Goyal, IIT Roorkee
Tutor: Prof. S. Kal, IIT Kharagpur
Presentation Overview
History, need of SiGe Technology
Physics behind HBTs
Bandgap Engineering
SiGe Strained Layer Epitaxy
SiGe HBT Fabrication: Selective-Epitaxial Growth
Technology aspects
Some applications of Si-Ge HBTs
Future Trends and conclusions
2
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15, 2007
History of SiGe Technology (1/2)
The concept of combining silicon (Si) and germanium (Ge) into an alloy for use in transistor engineering is an old one, and was probably envisioned by Shockley in 1950.
However, because of difficulties in growing lattice-matched
SiGe alloy on Si, this concept is reduced to practical reality only in the last 20 years.
In 1957, Kroemer patented the first heterojunction Si bipolar transistor(Si HBT).
3
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15, 2007
History of SiGe Technology (2/2)
SiGe HBT technology was originally developed at IBM for the high-end computing market, that effort, however, failed to CMOS, primarily because of its high power consumption.
In the early 1990s, IBM refocused its SiGe program towards the rapidly developing communications market.
Interestingly, for RF communications circuits, SiGe HBT consumes much less power than CMOS to achieve the same level of performance.
4
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15, 2007
Need for Si-Ge?
Due to booming market for computer and wireless communication systems, there is a need of a single transistor technology simultaneously capable of delivering:
Low Power
High Linearity
Low Noise
High speed of operation for RF, analog, memory and digital circuits
Low cost
“One technology fits all”
5
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15,
Heterojunction Bipolar Transistors
--An idea whose time has come
Ankit Goyal, IIT Roorkee
Tutor: Prof. S. Kal, IIT Kharagpur
Presentation Overview
History, need of SiGe Technology
Physics behind HBTs
Bandgap Engineering
SiGe Strained Layer Epitaxy
SiGe HBT Fabrication: Selective-Epitaxial Growth
Technology aspects
Some applications of Si-Ge HBTs
Future Trends and conclusions
2
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15, 2007
History of SiGe Technology (1/2)
The concept of combining silicon (Si) and germanium (Ge) into an alloy for use in transistor engineering is an old one, and was probably envisioned by Shockley in 1950.
However, because of difficulties in growing lattice-matched
SiGe alloy on Si, this concept is reduced to practical reality only in the last 20 years.
In 1957, Kroemer patented the first heterojunction Si bipolar transistor(Si HBT).
3
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15, 2007
History of SiGe Technology (2/2)
SiGe HBT technology was originally developed at IBM for the high-end computing market, that effort, however, failed to CMOS, primarily because of its high power consumption.
In the early 1990s, IBM refocused its SiGe program towards the rapidly developing communications market.
Interestingly, for RF communications circuits, SiGe HBT consumes much less power than CMOS to achieve the same level of performance.
4
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15, 2007
Need for Si-Ge?
Due to booming market for computer and wireless communication systems, there is a need of a single transistor technology simultaneously capable of delivering:
Low Power
High Linearity
Low Noise
High speed of operation for RF, analog, memory and digital circuits
Low cost
“One technology fits all”
5
Silicon-Germanium Heterojunction Bipolar Transistor
Saturday, December 15,
References: Artech House. 2003. Saturday, December 15, 2007 THANK YOU!!! Saturday, December 15, 2007