Bc107 Unit 4
BC107
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for
BC107 is BC177.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BC107
BC108
V CBO
Collector-Base Voltage (IE = 0)
50
30
V CEO
Collector-Emitter Voltage (I B = 0)
45
20
V
V EBO
Emitter-Base Voltage (I C = 0)
6
5
V
IC
Collector Current
100 o P t ot
Total Dissipation at T amb ≤ 25 C o at T case ≤ 25 C
T stg
St orage
Temperature
Tj
Max. Operating Junction Temperature
November 1997
V
mA
0.3
0.75
W
W
-55 to 175
o
C
175
o
C
1/6
BC107/BC108
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
200
500
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CBO
Parameter
Collector Cut-off
Current (IE = 0)
Test Cond ition s
Max.
Un it
o
15
15
nA µA o
for BC107
V CB = 40 V
V CB = 40 V for BC108
V CB = 20 V
V CB = 20 V
Min.
Typ .
15
15
µA µA T ca s e = 150 C
T ca s e = 150 C
Collector-Base
Breakdown Voltage
(IE = 0)
I C = 10 µ A for BC107 for BC108
50
30
V
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA for BC107 for BC108
45
20
V
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 µ A for BC107 for BC108
6
5
V
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
IB = 0.5 mA
I B = 5 mA
70
200
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
IB = 0.5 mA
I B = 5 mA
750
950
V BE(on) ∗
Base-Emitter O n
Voltage
I C = 2 mA
I C = 10 mA
VCE = 5 V
V CE = 5 V
h FE∗
DC Current G ain
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
I C = 10 µ A for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
VCE = 5 V
V (BR)CBO
h fe ∗
Small Signal Current
Gain
Gr. A
Gr. B
Gr. C
V CE = 5 V
650
700
110
110
200
110
110
200
420
Gr. A
Gr. B
40
Gr. A
Gr. B
Gr. C
40
100
I C = 2 mA
V CE = 5 V f = 1KHz for BC107 for BC107 Gr. A for BC107 Gr. B for BC108 for BC108 Gr. A for BC108 Gr. B for BC108 Gr. C
I C = 10 mA VCE = 10 V f = 100 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/6
Gr. A
Gr. B
550
250
600
mV mV 700
770
450
220
450
800
220
450
800
120
90
150
120
90
150
270
250
190
300
370
190
300
500
2
mV mV mV mV BC107/BC108
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
6
pF
C CBO
Collector Base
Capacitance
IE = 0
V CB = 10 V
f = 1MHz
4
C EBO
Emitter Base
Capacitance
IC = 0
V EB = 0.5 V
f = 1MHz
12
NF
Noise Figure
I C = 0.2 mA V CE = 5 V
B = 200Hz f = 1KHz
R g = 2K Ω
hie
Input Impedance
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
hre
h oe
Reverse Voltage Ratio
Output Admittance
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
V CE = 5 V
dB
4
3
4.8
5.5
3
4.8
7
µS µS µS µS µS µS µS
f = 1KHz
Gr. A
Gr. B
Gr. A
Gr. B
Gr. C
V CE = 5 V
10 -4
-4
10
10 -4
-4
10
-4
10
-4
10
-4
10
30
13
26
30
13
26
34
V CE = 5 V
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
2.2
1.7
2.7
3.1
1.7
2.7
3.8
Gr. A
Gr. B
Gr. C
Gr. A
Gr. B
Gr. C
10
f = 1KHz
Gr. A
Gr. B
Gr. A
Gr. B
2
pF
f = 1KHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
DC Normalized Current Gain.
Collector--emitter Saturation Voltage.
3/6
BC107/BC108
Collector-base Capacitance.
Power Rating Chart.
4/6
Transition Frequency.
BC107/BC108
TO-18 MECHANICAL DATA mm inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
5/6
BC107/BC108
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
6/6
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.
BC108
LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS
DESCRIPTION
The BC107 and BC108 are silicon planar epitaxial NPN transistors in TO-18 metal case.
They are suitable for use in driver stages, low noise input stages and signal processing circuits of television reveivers. The PNP complemet for
BC107 is BC177.
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BC107
BC108
V CBO
Collector-Base Voltage (IE = 0)
50
30
V CEO
Collector-Emitter Voltage (I B = 0)
45
20
V
V EBO
Emitter-Base Voltage (I C = 0)
6
5
V
IC
Collector Current
100 o P t ot
Total Dissipation at T amb ≤ 25 C o at T case ≤ 25 C
T stg
St orage
Temperature
Tj
Max. Operating Junction Temperature
November 1997
V
mA
0.3
0.75
W
W
-55 to 175
o
C
175
o
C
1/6
BC107/BC108
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
200
500
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CBO
Parameter
Collector Cut-off
Current (IE = 0)
Test Cond ition s
Max.
Un it
o
15
15
nA µA o
for BC107
V CB = 40 V
V CB = 40 V for BC108
V CB = 20 V
V CB = 20 V
Min.
Typ .
15
15
µA µA T ca s e = 150 C
T ca s e = 150 C
Collector-Base
Breakdown Voltage
(IE = 0)
I C = 10 µ A for BC107 for BC108
50
30
V
V
V ( BR)CEO ∗ Collector-Emitter
Breakdown Voltage
(I B = 0)
I C = 10 mA for BC107 for BC108
45
20
V
V
V (BR)EBO
Emitter-Base
Breakdown Voltage
(I C = 0)
I E = 10 µ A for BC107 for BC108
6
5
V
V
V CE(sat )∗
Collector-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
IB = 0.5 mA
I B = 5 mA
70
200
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 10 mA
I C = 100 mA
IB = 0.5 mA
I B = 5 mA
750
950
V BE(on) ∗
Base-Emitter O n
Voltage
I C = 2 mA
I C = 10 mA
VCE = 5 V
V CE = 5 V
h FE∗
DC Current G ain
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
I C = 10 µ A for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
VCE = 5 V
V (BR)CBO
h fe ∗
Small Signal Current
Gain
Gr. A
Gr. B
Gr. C
V CE = 5 V
650
700
110
110
200
110
110
200
420
Gr. A
Gr. B
40
Gr. A
Gr. B
Gr. C
40
100
I C = 2 mA
V CE = 5 V f = 1KHz for BC107 for BC107 Gr. A for BC107 Gr. B for BC108 for BC108 Gr. A for BC108 Gr. B for BC108 Gr. C
I C = 10 mA VCE = 10 V f = 100 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
2/6
Gr. A
Gr. B
550
250
600
mV mV 700
770
450
220
450
800
220
450
800
120
90
150
120
90
150
270
250
190
300
370
190
300
500
2
mV mV mV mV BC107/BC108
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
6
pF
C CBO
Collector Base
Capacitance
IE = 0
V CB = 10 V
f = 1MHz
4
C EBO
Emitter Base
Capacitance
IC = 0
V EB = 0.5 V
f = 1MHz
12
NF
Noise Figure
I C = 0.2 mA V CE = 5 V
B = 200Hz f = 1KHz
R g = 2K Ω
hie
Input Impedance
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
hre
h oe
Reverse Voltage Ratio
Output Admittance
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
I C = 2 mA for BC107 for BC107 for BC107 for BC108 for BC108 for BC108 for BC108
V CE = 5 V
dB
4
3
4.8
5.5
3
4.8
7
µS µS µS µS µS µS µS
f = 1KHz
Gr. A
Gr. B
Gr. A
Gr. B
Gr. C
V CE = 5 V
10 -4
-4
10
10 -4
-4
10
-4
10
-4
10
-4
10
30
13
26
30
13
26
34
V CE = 5 V
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
KΩ
2.2
1.7
2.7
3.1
1.7
2.7
3.8
Gr. A
Gr. B
Gr. C
Gr. A
Gr. B
Gr. C
10
f = 1KHz
Gr. A
Gr. B
Gr. A
Gr. B
2
pF
f = 1KHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
DC Normalized Current Gain.
Collector--emitter Saturation Voltage.
3/6
BC107/BC108
Collector-base Capacitance.
Power Rating Chart.
4/6
Transition Frequency.
BC107/BC108
TO-18 MECHANICAL DATA mm inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
TYP.
12.7
MAX.
0.500
B
0.49
0.019
D
5.3
0.208
E
4.9
0.193
F
5.8
0.228
G
2.54
0.100
H
1.2
0.047
I
1.16
0.045
L
45o
45o
D
A
G
I
E
F
H
B
L
C
0016043
5/6
BC107/BC108
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
...
6/6
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.