Failure Mode of Semiconductor
3 Failure Mechanism of Semiconductor
Devices
Contents
3.1
Reliability Factor and Failure Mechanism of
Semiconductor Devices
3- 1
3.1.1
Reliability factors
3- 1
3.1.2
Failure factors and mechanisms of semiconductor devices
3- 4
3.2
Failure Mechanisms of Semiconductor Devices
3- 6
3.2.1
Time dependent dielectric breakdown (TDDB)
3- 6
3.2.2
Slow trap (NBTI)
3- 8
3.2.3
Hot carrier (AHC)
3-10
3.2.4
Soft error
3-12
3.2.5
Reliability problem of nonvolatile memory
3-14
3.2.6
Electromigration (EM)
3-16
3.2.7
Stress migration (SM)
3-20
3.2.8
Reliability of Cu wire
3-23
3.2.9
Al corrosion
3-25
3.2.10
Passivation crack
3-32
3.2.11
Growth of Au/Al compound
3-35
3.2.12
Secondary breakdown
3-36
3.2.13
Thermal fatigue
3-37
3.2.14
Ion migration
3-38
3.2.15
Sn whisker
3-39
3.2.16
Problems in surface mounting
(package cracking)
3.2.17
Electrostatic discharge (ESD)
3-44
3.2.18
i
3-40
Latch-up
3-53
Failure Mechanism of Semiconductor Devices
3.
Failure Mechanism of Semiconductor Devices
Reliability Factor and Failure Mechanism of Semiconductor Devices
3.1
The reliability of semiconductor devices depends on their resistance to stresses applied to the devices, such as electric stress, thermal stress, mechanical stress, and external stress (humidity, etc.). If part of a device has a particularly weak structure, the weak part may react extremely to the applied stress, and such an extreme reaction may cause serious failures.
We design semiconductor devices after thoroughly examining the internal factors that may affect their reliability, so that such internal factors can be ignored under normal use conditions. However, if a device is used under the wrong use conditions, a failure may occur. So, this section describes typical factors of failures for our customers’
Devices
Contents
3.1
Reliability Factor and Failure Mechanism of
Semiconductor Devices
3- 1
3.1.1
Reliability factors
3- 1
3.1.2
Failure factors and mechanisms of semiconductor devices
3- 4
3.2
Failure Mechanisms of Semiconductor Devices
3- 6
3.2.1
Time dependent dielectric breakdown (TDDB)
3- 6
3.2.2
Slow trap (NBTI)
3- 8
3.2.3
Hot carrier (AHC)
3-10
3.2.4
Soft error
3-12
3.2.5
Reliability problem of nonvolatile memory
3-14
3.2.6
Electromigration (EM)
3-16
3.2.7
Stress migration (SM)
3-20
3.2.8
Reliability of Cu wire
3-23
3.2.9
Al corrosion
3-25
3.2.10
Passivation crack
3-32
3.2.11
Growth of Au/Al compound
3-35
3.2.12
Secondary breakdown
3-36
3.2.13
Thermal fatigue
3-37
3.2.14
Ion migration
3-38
3.2.15
Sn whisker
3-39
3.2.16
Problems in surface mounting
(package cracking)
3.2.17
Electrostatic discharge (ESD)
3-44
3.2.18
i
3-40
Latch-up
3-53
Failure Mechanism of Semiconductor Devices
3.
Failure Mechanism of Semiconductor Devices
Reliability Factor and Failure Mechanism of Semiconductor Devices
3.1
The reliability of semiconductor devices depends on their resistance to stresses applied to the devices, such as electric stress, thermal stress, mechanical stress, and external stress (humidity, etc.). If part of a device has a particularly weak structure, the weak part may react extremely to the applied stress, and such an extreme reaction may cause serious failures.
We design semiconductor devices after thoroughly examining the internal factors that may affect their reliability, so that such internal factors can be ignored under normal use conditions. However, if a device is used under the wrong use conditions, a failure may occur. So, this section describes typical factors of failures for our customers’