Introduction to Power MOSFET
Power MOSFET
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Two power MOSFETs in the surface-mount package D2PAK. Each of these components can sustain a blocking voltage of 120 volts and a continuous current of 30 amperes.
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive.
It was made possible by the evolution of CMOS technology, developed for manufacturing Integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.
The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
Contents
[hide]
• 1 Basic structure o 1.1 On-state resistance o 1.2 Breakdown voltage/on-state resistance trade-off o 1.3 Body diode
• 2 Switching operation o 2.1 Capacitances
2.1.1 Gate to source capacitance
2.1.2 Gate to drain capacitance
2.1.3 Drain to source capacitance o 2.2 Other dynamic elements
2.2.1 Packaging inductances
• 3 Limits of operation o 3.1 Gate oxide breakdown o 3.2 Maximum drain to source voltage o 3.3 Maximum drain current o 3.4 Maximum temperature o 3.5 Safe operating area
• 4 Latch-up (LU)
• 5 Technology o 5.1 Layout
5.1.1 Cellular structure o 5.2 Structures
5.2.1 P-substrate power MOSFET
5.2.2 VMOS
5.2.3 UMOS (also called Trench-MOS)
5.2.4 Super Junction
5.2.4.1 Super Junction Deep-Trench Technology
• 6 See also
• 7 References
• 8 Further reading
Basic structure [edit]
Fig. 1: Cross section of a VDMOS, showing an elementary cell. Note that a cell is
From Wikipedia, the free encyclopedia
Jump to: navigation, search
Two power MOSFETs in the surface-mount package D2PAK. Each of these components can sustain a blocking voltage of 120 volts and a continuous current of 30 amperes.
A power MOSFET is a specific type of metal oxide semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive.
It was made possible by the evolution of CMOS technology, developed for manufacturing Integrated circuits in the late 1970s. The power MOSFET shares its operating principle with its low-power counterpart, the lateral MOSFET.
The power MOSFET is the most widely used low-voltage (that is, less than 200 V) switch. It can be found in most power supplies, DC to DC converters, and low voltage motor controllers.
Contents
[hide]
• 1 Basic structure o 1.1 On-state resistance o 1.2 Breakdown voltage/on-state resistance trade-off o 1.3 Body diode
• 2 Switching operation o 2.1 Capacitances
2.1.1 Gate to source capacitance
2.1.2 Gate to drain capacitance
2.1.3 Drain to source capacitance o 2.2 Other dynamic elements
2.2.1 Packaging inductances
• 3 Limits of operation o 3.1 Gate oxide breakdown o 3.2 Maximum drain to source voltage o 3.3 Maximum drain current o 3.4 Maximum temperature o 3.5 Safe operating area
• 4 Latch-up (LU)
• 5 Technology o 5.1 Layout
5.1.1 Cellular structure o 5.2 Structures
5.2.1 P-substrate power MOSFET
5.2.2 VMOS
5.2.3 UMOS (also called Trench-MOS)
5.2.4 Super Junction
5.2.4.1 Super Junction Deep-Trench Technology
• 6 See also
• 7 References
• 8 Further reading
Basic structure [edit]
Fig. 1: Cross section of a VDMOS, showing an elementary cell. Note that a cell is
References: 2. ^ Pierre Aloïsi, Les transistors MOS de puissance in Interrupteurs électroniques de puissance, traite EGEM, under the direction of Robert Perret, Lavoisier, Paris, 2003 [in French] ISBN 2-7462-0671-4 3. ^ Duncan A