report 0800206
B.Tech Project, 2011
Indian Institute Of Technology, Gandhinagar
MODULATION CHARACTERISTIC OF A
SEMICONDUCTOR LASER DIODE
Project Guide
Prof. Arup Lal Chakraborty
Department of Electrical Engineering
Submitted by
Vivek Maheshwary (0800206)
Department of Electrical Engineering
27th November, 2011
ACKNOWLEDGEMENT
I would like to express my sincere gratitude to my project guide Prof. Arup Lal Chakraborty for the continuous support, for his patience, motivation, enthusiasm, and immense knowledge in optical fibre field. His guidance helped me a lot all time to proceed further to finish my project and writing of this report. I could not have imagined having a better guide in this field of Semiconductor Laser Diodes.
I would also like to thank Abhishek Upadhyay (P.G. student) for giving me insights into the concepts of semiconductor laser diode.
ABSTRACT:
Recent calibration‐free tunable diode laser spectroscopy (TDLS) techniques have shown that knowledge of the modulation characteristics of the laser is critical to achieve optimum performance of the sensor. This report investigates the intensity modulation characteristics of a near‐infrared
VCSEL for potential use in gas sensing applications. The highly nonlinear dc characteristics of VCSELs distinguish them from other semiconductor lasers and makes this study relevant and interesting. The report takes a close look at the relative levels of the linear and nonlinear intensity modulation of the laser. TABLE OF CONTENTS:S.No.
Title
Page Number
1.
INTRODUCTION
1
2.
Basics of Tunable Diode Laser Spectroscopy
2-3
3.
Calibration-free Wavelength Modulation Spectroscopy
4-5
4.
VCSEL
6-7
5.
VITC002 VCSEL DRIVER CIRCUIT
8-12
6.
PHOTO DETECTOR CIRCUIT
13
7.
CW operation with internal set value (20.51mA) graphs
14-16
8.
Intensity
Indian Institute Of Technology, Gandhinagar
MODULATION CHARACTERISTIC OF A
SEMICONDUCTOR LASER DIODE
Project Guide
Prof. Arup Lal Chakraborty
Department of Electrical Engineering
Submitted by
Vivek Maheshwary (0800206)
Department of Electrical Engineering
27th November, 2011
ACKNOWLEDGEMENT
I would like to express my sincere gratitude to my project guide Prof. Arup Lal Chakraborty for the continuous support, for his patience, motivation, enthusiasm, and immense knowledge in optical fibre field. His guidance helped me a lot all time to proceed further to finish my project and writing of this report. I could not have imagined having a better guide in this field of Semiconductor Laser Diodes.
I would also like to thank Abhishek Upadhyay (P.G. student) for giving me insights into the concepts of semiconductor laser diode.
ABSTRACT:
Recent calibration‐free tunable diode laser spectroscopy (TDLS) techniques have shown that knowledge of the modulation characteristics of the laser is critical to achieve optimum performance of the sensor. This report investigates the intensity modulation characteristics of a near‐infrared
VCSEL for potential use in gas sensing applications. The highly nonlinear dc characteristics of VCSELs distinguish them from other semiconductor lasers and makes this study relevant and interesting. The report takes a close look at the relative levels of the linear and nonlinear intensity modulation of the laser. TABLE OF CONTENTS:S.No.
Title
Page Number
1.
INTRODUCTION
1
2.
Basics of Tunable Diode Laser Spectroscopy
2-3
3.
Calibration-free Wavelength Modulation Spectroscopy
4-5
4.
VCSEL
6-7
5.
VITC002 VCSEL DRIVER CIRCUIT
8-12
6.
PHOTO DETECTOR CIRCUIT
13
7.
CW operation with internal set value (20.51mA) graphs
14-16
8.
Intensity
References: 1. A. Farooq, J. B. Jeffries and R.K. Hanson, App. Phys. B 90, 619-628 (2008). 2. T. Asakawa, N, Kanno, and K. Tonokura, Sensors 10, 4686-4699 (2010). Opt. 41, 6018-6029 (2002). Smith, Appl. Opt. 26, 4058-4097 (1987). 5. W. Johnstone, A. J. McGettrick, K. Duffin, A. Cheung and G. Stewart, IEEE Sensors Journal 8, (2008) 6. G. B. Rieker, J. B. Jeffries and R. K. Hanson, Appl. Opt. 48,(2009) 7