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UNISONIC TECHNOLOGIES CO., LTD S8050
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1
NPN SILICON TRANSISTOR
FEATURES
* Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 Lead-free: S8050L Halogen-free: S8050G TO-92
ORDERING INFORMATION
Normal S8050-xx-T92-B S8050-xx-T92-K Order Number Lead Free Plating S8050L-xx-T92-B S8050L-xx-T92-K Halogen Free S8050G-xx-T92-B S8050G-xx-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk
www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-013.B
S8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 700 mA Collector Dissipation(Ta=25°C) Pc 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO Ic=100μA, IE=0 Collector-Emitter Breakdown Voltage BVCEO Ic=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=100μA, Ic=0 Collector Cut-Off Current ICBO VCB=30V, IE=0 Emitter Cut-Off Current IEBO VEB=5V, Ic=0 hFE1 VCE=1V, Ic=1mA DC Current Gain hFE2 VCE=1V, Ic=150 mA hFE3 VCE=1V, Ic=500mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(SAT) Ic=500mA, IB=50mA Base-Emitter Saturation Voltage VBE VCE=1V, Ic=10mA Current Gain Bandwidth Product fT VCE=10V,
LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR
DESCRIPTION
The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1
NPN SILICON TRANSISTOR
FEATURES
* Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 Lead-free: S8050L Halogen-free: S8050G TO-92
ORDERING INFORMATION
Normal S8050-xx-T92-B S8050-xx-T92-K Order Number Lead Free Plating S8050L-xx-T92-B S8050L-xx-T92-K Halogen Free S8050G-xx-T92-B S8050G-xx-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk
www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd
1 of 4
QW-R201-013.B
S8050
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current Ic 700 mA Collector Dissipation(Ta=25°C) Pc 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO Ic=100μA, IE=0 Collector-Emitter Breakdown Voltage BVCEO Ic=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=100μA, Ic=0 Collector Cut-Off Current ICBO VCB=30V, IE=0 Emitter Cut-Off Current IEBO VEB=5V, Ic=0 hFE1 VCE=1V, Ic=1mA DC Current Gain hFE2 VCE=1V, Ic=150 mA hFE3 VCE=1V, Ic=500mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(SAT) Ic=500mA, IB=50mA Base-Emitter Saturation Voltage VBE VCE=1V, Ic=10mA Current Gain Bandwidth Product fT VCE=10V,