EMT 112/4 EXPERIMENT # 1 BJT COMMON EMITTER AMPLIFIER ‘Q’ POINT DC CURRENTS & VOLTAGES LOAD LINES VOLTAGE GAIN MARKS Pre Lab DC I&V 5 βDC 1 5 DC load line 3 re 1 Av 3 D 4 C 3 Total 25 NAME PROGRAMME MATRIK # DATE 1 Electronic Analog 1 (EMT 112) Semester II 2009/2010 Exp . 1 EXPERIMENT 1 BJT Common Emitter Amplifier 1. OBJECTIVE: 1.1 DC OPERATIONAL EFFECTS The experimental objectives are to: i) Compare the amplifier theoretical and practical
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Common Emitter Amplifier Bagos‚ Elyza Pangilinan‚ John Oliver Ateneo de Manila Loyola Heights‚ Quezon City Abstract – This experiment shows the practicality and behavior of a Common Emitter Amplifier circuit through the analysis of its varying input and output signals. I. INTRODUCTION The common emitter amplifier circuit makes use of a voltage divider circuit as seen in previous lessons on DC analysis. However‚ for the small signal analysis portion for this circuit‚ the objective is
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Lab 3 – Characterization of BJTs and Single Stage BJT Amplifier Part 1: NPN transistor Characteristics The Graph of Characteristics of NPN transistors Part 2: PNP transistor Characteristics The Graph of Characteristics of PNP transistors Part 3: Forward current gain and Early Voltage determination a) Using the data from SPA‚ plot the IC vs VCE characteristics of the npn and pnp transistors b) Determine‚ from the graph‚ the DC β and the early voltage
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“PROPOSED DESIGN OF A SMALL SIGNAL AUDIO AMPLIFIER” A Project Development Study Presented to the Faculty of the College of Engineering‚ Architecture and Fine Arts BATANGAS STATE UNIVERSITY Gov. Pablo Borbon Main Campus II Alangilan‚ Batangas City In Partial Fulfillment Of the Requirements for the Degree BACHELOR OF SCIENCE Major in Electronics Engineering By: Dimaculangan‚ Buena Amor L. March‚ 2014 APPROVAL SHEET This project study entitled‚ “PROPOSED
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external source The Field Effect Transistor(FET) | The bipolar Junction Transistor (BJT) | is an active device(gate ‚ drain ‚ source)it is a voltage controlled valve.The gate voltage VGS controls the drain current (1D). | is an active deviceis a three-element (emitter‚ base‚ and collector )it is a current control value.The base current Ib control the collector current (Ic) ’ | | | Regions of BJT operation | The cutoff | The active | The saturation | The breakdown | The transistor
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AMPLIFIER An amplifier is an electronic device increases the amplitude of a small signal to a useful level‚ even maintaining small signal’s detail. This is known as Linearity. FIGURES OF MERIT 1) Gain: Ratio between the magnitude of output and input signals. 2) Bandwidth: The Width of the useful frequency range. 3) Efficiency: The ratio between the power of the output and total power consumption. 4) Linearity: The degree of proportionality between input and output. 5) Noise: A measure of undesired
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Analysis of MOSFET and BJT 511030964 黄鈃灵（list the items and find the corresponding parts of MOSFET） 5100309722 唐璿（find the corresponding parts of BJT） Items | MOSFET | BJT | Physical structure | NMOS: | npn: | | PMOS: | pnp: | current | IG=0ID=IS | ‚() | Output curves | In NMOS‚ Vt>0；In PMOS‚ VtVB (or VCE>0.2V)‚ the assumption is correct. Otherwise the BJT is operating in saturation region. Thus we shall assume VCE=VCE(sat) to obtain IC. Here the common emitter current gain is defined
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BJT AC Analysis The re Transistor model 1 of 38 Remind Q-poiint re = 26mv/IE BJT AC Analysis Three amplifier configurations‚ Common Emitter Common Collector (Emitter Follower) Common Base 2 of 38 BJT AC Analysis 3 of 38 Process Replace transistor with small-signal model. Replace capacitors with short-circuits (at midband frequency caps have relatively low impedance) Replace DC voltage sources with short-circuits. Replace DC current sources with open-circuits). BJT AC Analysis
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Class A amplifiers amplify over the whole of the input cycle such that the output signal is an exact scaled-up replica of the input with no clipping. Class A amplifiers are the usual means of implementing small-signal amplifiers. They are not very efficient — a theoretical maximum of 50% is obtainable‚ but for small signals‚ this waste of power is still extremely small‚ and can be easily tolerated. Only when we need to create output powers with appreciable levels of voltage and current does Class
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The transistor is made of silicon and has =150. Assume VCE = 0.7 V. Figure 1 Ans: 2.85 V (4 marks) Determine the voltage gain‚ Av of the circuit shown in Figure 2. Assume = 200. Figure 2 Ans: Av = 291 (6 marks) For the common emitter amplifier circuit shown in Figure 3‚ (i) Draw the h parameter equivalent circuit. (ii) Derive the expression for voltage gain and input impedance in h parameters. (iii) If the transistor of Figure 3 has the following set of h parameters:
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