tResistors‚ Capacitors‚ and Inductors In partial fulfillment of the requirements In Electronics 2 Submitted to the Department of TLE Submitted by: Reyes‚ Zelly B. IV-Prestige August 1 Table of Contents TOPIC | PAGE | Resistors | | Definition | 1 | Usage | 2 | Classification and Types | 2 | Configuration | 5 | Generalization | 6 | Capacitors | | Definition | 7 | Usage | 8 | Classification and Types | 8 | Configuration | 10 | Generalization | 11 |
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Seat No.: ________ Enrolment No.___________ GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER–V • EXAMINATION – SUMMER 2013 Subject Code: 151004 Subject Name: Electronic Communication Time: 10.30 am - 01.00 pm Date: 20-05-2013 Total Marks: 70 Instructions: 1. Attempt all questions. 2. Make suitable assumptions wherever necessary. 3. Figures to the right indicate full marks. Q.1 (a) Derive Friiss formula for noise factor of cascaded amplifier. 07 (b) Prove that ESD of
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using touch-sensitive capacitance sensors to control the sounds made by their instruments.[6] IBM began building the first touch screens in the late 1960s‚ and‚ in 1972‚ Control Data released the PLATO IV computer‚ a terminal used for educational purposes that employed single-touch points in a 16x16 array as its user interface. The prototypes[7] of the x-y mutual capacitance multi-touch screens (left) developed at CERN One of the early implementations of mutual capacitance touchscreen technology
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Electrical Design 2 Dept‚ Design Div‚ D i 1 Di Video Design Sector Photo Basic Principle The simplest form of a capacitor consists of two conductor and separated by an insulator. The following formula shows the parameter which influence capacitance. i fl it How Capacitive Touch
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Measurements of Capacitance and Inductance Purpose: To use equipment and techniques to determine the structure of a hidden series RLC circuit and to measure the values of the various components in that circuit. Theory: To see how an RLC circuit works‚ consider the circuit in Figure 1 with the capacitor initially charged. Fig. 1 RLC Circuit Since there is a conducting wire connecting the negative side of the capacitor to the positive‚ a current will begin to flow in the counterclockwise
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Margins 5.5.2 Static Consumption Robustness Revisited 5.5.3 Putting It All Together 5.5.4 Analyzing Power Consumption Using SPICE 5.3.3 5.4 Performance of CMOS Inverter: The Dynamic Behavior 5.4.1 180 Computing the Capacitances 5.6 Perspective: Technology Scaling and its Impact on the Inverter Metrics Section 5.1 181 Exercises and Design Problems 1. [M‚ SPICE‚ 3.3.2] The layout of a static CMOS inverter is given in Figure 5.1. (λ = 0.125 µm). a
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of Blood through Heart Components of Vascular System • Arteries – Aorta‚ Large Arteries‚ Small Arteries • • • • • Distributing network Arterioles – Resistance Vessels Capillaries – Exchange Vessels Venules & Small Veins – some exchange‚ capacitance vessels Large Veins and Inferior and Superior Vena Cava – Collecting Vessels returning blood to the heart. Fig 9-1 June 19‚ 2013 3 CV 4 Specialized Cells and Structures within the Heart Specialized Cells – cells with differing properties
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CHAPTER I PROBLEM AND ITS BACKGROUND INTRODUCTION The art of creating new peripherals as a medium for innovations and changes are being introduced. With new technology nowadays‚ more interesting materials are present and more systems are developed. In Rizal Technological University‚ Faculty‚ Students are using lockers or cabinets in a way of storing files or important documents for privacy and security purposes. Some locker is controlled only by ordinary padlock‚ so that the user might not
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What’s the difference between resistance and resistivity? Resistance is the obstruction offered to the flow of current by a conductor. Resistivity is the obstruction offered to the flow of current by UNIT AREA OF the conductor. So basically‚ resistance is the property of the object (say a copper wire)‚ whereas resistivity is the property of the substance (copper). And so resistance depends upon the properties of the object. Whereas resistivity depends upon the properties of the metal.
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Physical and Materials Constants Boltzmann ’s constant Electron charge Thermal voltage k q kT/q 1.38 x 10-23 1.6 x 10-19 0.026 (at T= 300 K) 1.12 (at T = 300 K) J/K C V Energy gap of silicon (Si) Eg eV Intrinsic carrier concentration of silicon (Si) ni 1.45 x 1010 (at T = 300 K) cm73 Dielectric constant of vacuum Dielectric constant of silicon (Si) Dielectric constant of silicon dioxide (SiO2 ) 60 8.85 x 10-14 F/cm ESi 11.7 x O F/cm 6.x 3.97 x EO F/cm Commonly Used Prefixes
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