Misr International University – Faculty of Engineering Electronics and Communications Department Subject: Solid State Electronic Devices Code: GEE 235 Sheet 2 pn Junction 1 Calculate the built-in potential barrier‚ Vbi‚ for Si. pn junction if it has the following dopant concentration at T = 300 K‚ ND = l014 cm -3‚ NA = 1017 cm-3‚ ni=1.5x1010 cm-3. 2 An abrupt
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energy storing elements such as capacitances and inductances are known as passive elements. The transformers may be regarded as a matching device. The success of any electronic circuit depends not only on proper selection of the active elements but on the passive and matching elements too. The proper function‚ of an active device is decided by the proper values of these passive elements. Hence the selection of these elements such as resistances‚ inductances‚ capacitance‚ and transformers not only
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Teenager invents revolutionary device; A device which can charge a cell phone in just 20 seconds A California teen has attracted the attention of tech giants Google for her potentially revolutionary invention which charges a phone in 20 seconds flat. The super-fast charging device has been dubbed a super capacitor by 18-year-old Esha Khare‚ of Saratoga - as she took home $50‚000 from the Intel International Science and Engineering Fair‚ which took place in Phoenix this week. The device will
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between the centres of the two rings is (a)-q- 1 2~~:eo = = 2 ) their 1 R IbI qR I c I 4~reo R q 1 (d) zero 3 J A parallel plate capacitor is made by stacking n n... alternatively. If the capacitance between any two capacitance Is (a)(n+1)C (b}(n-1}C (c)~ C a~es ~paced I AIEEE 2005 I plates connected is ’C’‚ then the resultant I AIEEE 2005 I + 4) A charged ball B hangs from a silk thre~ h. makes an angle & with a large conducting sheet
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Submitted By A Minor Project Report On “DIGITAL SOIL MOISTURE TEST” In partial fulfillment of requirements for the degree of Bachelor of Technology In Electrical Engineering Guided by Prof. VINEET MEHTA Name of the student: BHOMARAM BHISNOI (10EJIEEOO6) JAGDEV(10EJIEE022) DEPARTMENT
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BASIC DIODE ELECTRONICS INTRODUCTION TO DIODES The p-n Junction The p-n junction is a homojunction between a p-type and an n-type semiconductor. It acts as a diode‚ which can serve in electronics as a rectifier‚ logic gate‚ voltage regulator (Zener diode)‚ switching or tuner (varactor diode); and in optoelectronics as a light-emitting diode (LED)‚ laser diode‚ photodetector‚ or solar cell. In a relatively simplified view of semiconductor materials‚ we can envision a semiconductor as having two
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gKit 32. TWO STAGE FM TRANSMITTER This Kit is a powerful two stage‚ 9V FM transmitter (Tx) with a range of up to 1 kilometer in the open. It uses an RF transistor in its output stage. Distance of transmission is critically dependent on the operating Conditions (in a building or out on the open)‚ type of aerial used (single wire or dipole)‚ operating voltage (12V is better than 6V) and if the circuit is peaked for maximum performance. The kit is constructed on a single-sided printed circuit board
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English Project Members:1) Sweekrith Iyer 2) Vivek bhandarkar 3) Samadhan 4) Pranav Gosavi 5) Ravindra Jagtap __________________Touch Screen Technology____________________ Sweekrith- In This Modern Time One Thing Is Very Common And All People That Are From Elders To Children Are Crazy About It. They Just Want More And More Features In It And They Keep On Waiting For Them. It Is Now A Common Topic Among The Young Generation. It Is None Other But The Touch Screen Technology. A Very
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lectrostatics (Q.1) What is the direction of electric field intensity at a point on equatorial line of dipole? ( 1 mark ) (Q.2) Define electric dipole moment? ( 1 mark ) (Q.3) Define electric field intensity? ( 1 mark ) (Q.4) When does a dipole experiences maximum torque placed in uniform electric field? ( 1 mark ) (Q.5) What happens when an electric dipole is placed in non uniform electric field? ( 1 mark ) (Q.6) What is the value of electric field intensity inside a charged conductor? Why
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produces a flux density of 1 T in the air-gap. Find (i) the relative permeability of the mild steel and (ii) inductance of the winding. ( µ0 = 4π ×10−7 ) (a) State coulomb’s law of electrostatics. (b) Define capacitance. Derive an expression for the total capacitance of a group of capacitance when (i) they are connected in series (ii) they are connected in parallel. (c) A series combination having R = 2 M Ω and C = 0.01 µF is connected across d.c. voltage source of 50V. Determine capacitor voltage
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