Poor Academic Performance in Mathematics 1V in the Fourth Year Section Paderanga: Math Enrichment and Math Trail Activity Approaches for School Year 2012 - 2013 AN ACTION RESEARCH Of GINGOOG CITY COMPREHENSIVE NATIONAL HIGH SCHOOL GINGOOG CITY Abstract The study sought to determine the effects of Math Enrichment Approach and Math Trail Activity Approach as interventions to solve the respondents’ poor academic performance in Mathematics IV as a result
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Gender Identity‚ Personality‚ and Eating Disorders Case Analysis Introduction Abnormal disorders diagnosed in the DSM-IV-TR‚ a multi-axial diagnostic tool‚ used by clinicians‚ psychologists‚ psychiatrists‚ and medical professionals for the classification of mental disorders (Hansell & Damour‚ 2008). Axis I and Axis II of the DSM-IV-TR covers classifications of mental disorders that include unwelcome types of distress and impairment‚ that constitutes mental disease‚ disorder
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hold down a job. However‚ there is a difference in the opinion in regards to the causes of the increase in the number of people suffering from mental illness. For example‚ researchers from the Diagnostic and Statistical Manual of Mental Disorders (DSM-1V) claimed‚ that the increase in mental health is
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INPUTS V1 +4 +2 +1 +4 0 +3 V2 +1 +3 0 +4 +1 +2 VOUT (V) -5V +5V -5V 0V +5V -5V VIN +0.2V –0.4V 0V +0.32V VOUT -1V +2V 0V -1.6V VIN VOUT +0.3V -0.75V –0.15V +0.38V +5V –2.0V -1V +0.4V Figure 1-2 b Figure 1-3 b&c Input Voltage V1 V2 V3 +1V +1V +1V +1V –1V –1V +2V –1V –1V –3V –1V +3V +1V +2V –1V Output Voltage Measured Calculated -3V -3V +1V +1V 0V 0V +1V -2V +1V -2V Figure 1-4b 1 Experiment 2 Schmitt Trigger Procedure Question Answer 1. No. Because the 7476 J-K flip-flop
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*version 9.04 *** Layout tech: mocmos‚ foundry MOSIS *** UC SPICE *** ‚ MIN_RESIST 4.0‚ MIN_CAPAC 0.1FF .global gnd *** TOP LEVEL CELL: NMOSCH1{sch} Mnmos-4@1 net@16 net@7 gnd gnd NMOS L=2U W=2U VDS net@16 gnd DC 1V AC 0V 0 VGS net@7 gnd DC 1V AC 0V 0 * Spice Code nodes in cell cell ’NMOSCH1{sch}’ .include D:\ADVD\mos_models.txt .dc VDS 0 5 0.1 VGS 0 5 0.1 Circuit: .ENd Observation: It is seen that when the VGS is swiped VS VDS then the above output is seen. As the
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RESEARCH CASE STUDY: PERSONAL INTERVIEWED - ALCOHOL ABUSE Jennifer Campbell Theories of Personality (PSY 500A) Lynn University December 6‚ 2012 Introduction The purpose of this paper is to create a case study based on a specific theory of personality development. Kelly (1969) stated that personality theory presents a positive view of human nature (Schultz‚ & Schultz‚ 2009). The combination of cognitive and behavioral‚ together forms the infrastructure of the individual ’s personality;
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In section 2‚ mathematical equations of memristor model are briefly explained. The proposed memristor emulator is discussed along with mathematical equations and operation in section 3. The results of experiments and simulations of the proposed circuit are discussed in section 4. A short conclusion is given in section 5. Mathematical Model of Memristor Figure 2 is the schematic of the two terminal memristor [1]. A thin titanium dioxide (TiO2) is sandwiched between two metal wires (platinum). The
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Breakdown Voltage BVEBO IE=100μA‚ Ic=0 Collector Cut-Off Current ICBO VCB=30V‚ IE=0 Emitter Cut-Off Current IEBO VEB=5V‚ Ic=0 hFE1 VCE=1V‚ Ic=1mA DC Current Gain hFE2 VCE=1V‚ Ic=150 mA hFE3 VCE=1V‚ Ic=500mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=500mA‚ IB=50mA Base-Emitter Saturation Voltage VBE(SAT) Ic=500mA‚ IB=50mA Base-Emitter Saturation Voltage VBE VCE=1V‚ Ic=10mA Current Gain Bandwidth Product fT VCE=10V‚
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time 1A 1C 1s Unit: Q = Coulomb (C) I = Ampere (A) t = Second (s) Potential difference Work done to move a unit charge from one point to another V W Q Unit Volt 1 Volt 1 joule 1 coulomb 1V 1J C 1 Ohm’s law Current potential difference V I V = IR (R = resistance) Unit (R) 1 1V 1A (Ohm) Factors on which resistance depends 1. 2. R R l‚ when A and material constant l = length A‚ when l and material constant A = perpendicular cross-section R R l A l A ( = resistivity)
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Introduction FIGURE 1 : N-Channel JFET The Junction Field Effect Transistor (JFET) is a three terminal device that consists of drain‚ source‚ and gate. The JFET is a voltage-controlled‚ constant-current device and a unipolar device. For this experiment‚ we used the JFET Self-bias circuit which in particular we use the n-channel. This kind of circuit is simple yet effective and is the most common biasing method for JFETs. The important thing to know is that the gate is essentially
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