microwave signal using Klystron tube and Gunn oscillator. 1.3.3 To understand the measurement process using VSWR meter. Study Group: Microwave Engineering Created by: Mr. Amit Udawat Exp.No: 01 Modified by: Mr.Abhijeet Gorey‚ Ms.Nisha Kiran Acropolis Technical Campus‚ Indore Department of Electronics and Communication Engineering Subject-Microwave lab Sub. Code- EC 704 Exp. No : 01 1.4 Theory: 1.4.1 Gunn Power Supply MXG 1. Gunn Power Supply : Gunn Power Supply comprises of an electronically
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report on Gunns Limited Student name: Yuanyuan Ma (Diana) Student number: 22850 Class: BAE 5 Submission date: January 18‚ 2011 Table of content Executive summary 2 Introduction 3 Evaluation of the Gunns Limited ethical issue 3 Evaluation of Gunns Limited in terms of financial analysis 5 Conclusion and recommendation 7 References 9 Executive summary This report is prepared for the investor to consult that whether the Gunns Limited
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charge densities in a semiconductor‚ Fermi Dirac distribution‚ carrier concentrations and fermi levels in emiconductor‚ Generation and recombination of charges‚ diffusion and continuity equation‚ Mass action Law‚ Hall effect. UNIT 2: Junction diodes‚ Diode as a ckt. element‚ load line concept‚ clipping and clamping circuits‚ Voltage multipliers. Construction‚ characteristics and working principles of UJT UNIT 3: Transistor
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current carriers of diode? 10. Define diode. II. Testing Diode (5 pts each) 1. Write how to test Good Diode with your ohmmeter. 2. Write how to test Shorted Diode with your ohmmeter. 3. Write how to test Open Diode with your ohmmeter. 4. Write how to test Leaky Diode with your ohmmeter. III. Identification: Identify the following statement/question and write your answer on the space provided before each item. _____________ 1. This is the only type of diode that is used as oscillator
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semiconductor‚ but the junction between them can become depleted of charge carriers‚ and hence non-conductive‚ depending on the relative voltages of the two semiconductor regions. By manipulating this non-conductive layer‚ p–n junctions are commonly used as diodes: circuit elements that allow a flow of electricity in one direction but not in the other (opposite) direction. This property is explained in terms of forward bias and reverse bias‚ where the term bias refers to an application of electric voltage to
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5.13 Full wave regulated power supply +5v and +12v 22 5. Electronic components used 6.14 Resistors 25 6.15 Capacitors 27 6.16 Diodes 30 6.17 Zener diodes 33 6.18 Light emitting diodes 34 6.19 Relays 37 6.20 Transistors 40 6.21 Switches 42 6.22 Connectors and cables 43 7. Advantages 46 8. Applications
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further classified as Semiconductor Devices : Semiconductor diode‚ zener diode‚ and varactor diode etc. Uni-junction transistor‚ Bipolar junction transistor (BJT)‚ FET‚ silicon‚ Controlled rectifier etc. Vacuum Tube Devices : Vacuum tube diode‚ triode‚ Tetrode‚ Pentode‚ Hexode‚ Heptode etc. Gas Tube Devices : Gas diodes‚ Thyratons etc. Photo Sensitivity Devices : Gas photodiodes‚ photo multiplier tubes‚ photodiodes‚ light emitting diode‚ photosensitive transistor etc. Though there are devices
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saw . Later in 1897‚ this lamp straightening process was carried out and has been translated into alternating current into direct current . Further‚ radio waves separated detectors developed. In 1906‚ with the addition of a control element ‚ this diode triode lamp on lamp -worked and was thus opened the way to electronic science . Lamp made several circuits with many years ‚ especially in the Second World War as many different devices have been developed In 1948‚ with the invention of the transistor
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increasing or decreasing the number of level detector metal strips (L1 through L12) and their associated components. In the circuit‚ diodes D1‚ D2 and D13 form half-wave rectifiers. The rectified output is filtered using capacitors C1 through C3 respectively. Initially‚ when water level is below strip L1‚ the mains supply frequency oscillations are not transferred to diode D1. Thus its output is low and LED1 does not glow. Also‚ since base voltage of transister T1 is low‚ it is in cut-off state and its
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Elec221 Final Exam December 14‚ 2002 7. The slight slope of the collector current with increased collector voltage in the common-emitter characteristics of a BJT is called the ________early_____________ effect which is a result of ______________base width modulation_____________________. Short Questions (1 point for each blank) 8. The total capacitance of an ideal MOS structure includes the capacitance of ____SiO2_______ and the capacitance of _____depletion_region____________. 1. The
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