Power Electronics * The control and conversion of electrical power by power semiconductor devices (wherein these devices operate as switches) * To control and convert electrical power from one form to another * Power range: from a few VA/Watts to several MVA / MW * The primary task of power electronics is to process and control the flow of electric energy by supplying voltages and currents in a form that is optimally suited for user loads. Interdisciplinary Nature of Power
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EE3501E – Power Electronics Lecture 2 Text Power Electronics ‐ A First Course Author: Ned Mohan ‐ / 2012 John Wiley and Sons 1 Lecture 1 ‐ Review • • • • • • What is Power Electronics? Applications of power electronics. Linear vs Switched power conversion. Switching‐power pole Inductors and capacitors‐basic properties. Pulse‐Width‐Modulation (PWM) 2 Linear vs Switch mode conversion 3 Switching Power‐Pole + Vin q A qA 1 vv A + vA - A Vin 0 0 t
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Chapter 1 1. An ideal voltage source has 5. A real current source has a. Zero internal resistance b. Infinite internal resistance c. A load-dependent voltage d. A load-dependent current a. Zero internal resistance b. Infinite internal resistance c. A small internal resistance d. A large internal resistance 2. A real voltage source has 6. If a load resistance is 1 kohm‚ a stiff current source has a resistance of a. Zero internal resistance b. Infinite internal resistance c. A small internal
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1. Introduction Automatic Street Light Control System is a simple and powerful concept‚ which uses transistor as a switch to switch ON and OFF the street light automatically. By using this system manual works are removed. It automatically switches ON lights when the sunlight goes below the visible region of our eyes. It automatically switches OFF lights under illumination by sunlight. This is done by a sensor called Light Dependant Resistor (LDR) which senses the
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Misr International University – Faculty of Engineering Electronics and Communications Department Subject: Solid State Electronic Devices Code: GEE 235 Sheet 2 pn Junction 1 Calculate the built-in potential barrier‚ Vbi‚ for Si. pn junction if it has the following dopant concentration at T = 300 K‚ ND = l014 cm -3‚ NA = 1017 cm-3‚ ni=1.5x1010 cm-3. 2 An abrupt
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SOLA3507/SOLA9002 Solar Cells School of Photovoltaic and Renewable Energy Engineering Lecture 13 – Review Dr Alison Lennon (Rm 127 TETB) SOLA3507-9002/13-1 Assignment and Quiz Marks • • Marks for on-time assignments (Assignment 2 and PG Assignment) should be available on BB by next Mon 9 am. Final quiz marks will be available on BB by Fri 14 June (hopefully sooner). Please check your mark and come and see me if you think it is wrong. PLEASE BRING MARKED COPIES OF YOUR QUIZZES WITH YOU
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Laboratory Handbook Stage 1 Semester 2 ENG1030M Electronics Applications Project Electronic Applications (ENG1030M) Module overview This laboratory based single module (100 hours total) consists of one 3 hour session per week and has 3 main parts. Each part involves practical and written work‚ these are shown below in chronological order. You should be advised that that the lab sessions use up 36 hours and therefore you will be expected to use the remaining 64 hours in background work
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semiconductors are simple-element semiconductor materials such as silicon or germanium. Silicon is the most common semiconductor material used today. It is used for diodes‚ transistors‚ integrated circuits‚ memories‚ infrared detection and lenses‚ light-emitting diodes (LED)‚ photosensors‚ strain gages‚ solar cells‚
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ANNA UNIVERSITY CHENNAI: CHENNAI – 600 025 B.E DEGREE PROGRAMME (3 - 8 SEMESTERS) ELECTRICAL AND ELECTRONICS ENGINEERING (Offered in Colleges affiliated to Anna University) CURRICULUM AND SYLLABUS – REGULATIONS – 2004 SEMESTER III (Applicable to the students admitted from the Academic year 2006 – 2007 onwards) |THEORY |L |T |P |M | |1. |MA 1201
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independently tuning the effective Schottky barrier heights‚ a variety of reconfigurable device functionalities could be obtained. In particular‚ the same nanowire device could be configured to work as a Schottky barrier transistor‚ a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one. Nanometer-scale electronic devices fabricated from silicon nanowires (SiNWs) are drawing significant attention in view
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