Lecture 4 CMOS Inverter Professor Sunil Bhave p CU School of Electrical and Computer Engineering February 8‚ 2010 Inverters I t DC Analysis Operating regions and voltage transfer curve Logic levels and noise margins Transient Analysis - delay Power P Objectives Obj ti We have studied how a transistor can be viewed as a switch (switchview) We have derived the I-V model for a transistor Now with this simple model‚ we analyze the “electrical” properties of a CMOS inverter Noise Margin Delay
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Difference between Static and Dynamic RAM The journey of dynamic and static RAM was initiated in 1960s which was readily developed in 1970s. In recent days‚ the technology is much more user friendly. RAM is classified into two types: Dynamic RAM and Static RAM. Static RAM uses a form of flip-flop to circulate data. It uses almost six transistors for its functioning. On the other hand‚ Dynamic RAM (DRAM) is typically charged on the capacitor in it. Static RAM holds the data in the
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EDC-UNITV Question&answer UNIT-V SMALL SIGNAL LOW FREQUENCY BJT MODEL 1. List out the advantages of h-parameters. 1. h-parameters are real numbers at audio frequencies. 2. These are easy to measure. 3. h-parameter can also be obtained from the transistor static characteristic curves. 4. h-parameters are convenient to use in circuit analysis and design. 5. A set of h-parameters is specified for many transistors by the manufacturers 2. Draw the h-parameter circuit and its equivalent circuit in CE
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An Introduction to Digital Logic Families What is a Logic Family? In Digital Designs‚ our primary aim is to create an Integrated Circuit (IC). A Circuit configuration or arrangement of the circuit elements in a special manner will result in a particular Logic Family. What are the advantages of creating different Logic Families? Electrical Characteristics of the IC will be identical. In other words‚ the different parameters like Noise Margin‚ Fan In‚ Fan Out etc will be identical.
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ECE6130-Advanced VLSI Systems ** FreePDK 45nm Cadence virtuoso: Intro & Schematics ** Last Updated: 1/25/13 – Boris Alexandrov Setting Up Cadence Note: These instructions presume a basic level of Unix knowledge. 1. Logging into the ECE Linux machines Cadence at Georgia Tech is available on the Linux machines in Klaus 1448. You can log into these machines using your GTID and Password for authentication. If this is your first time using the Unix environment‚ please go through the following
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Low Voltage Analog Circuit Design Techniques: A Tutorial IEEE Dallas CAS Workshop 2000 Edgar Sánchez-Sinencio March 27‚ 2000 http://amsc.tamu.edu/ Texas A&M University Analog and Mixed-Signal Center Low Voltage Analog Circuit Design Techniques: Roadmap Low voltage (LV) power supply circuit design techniques are addressed in this tutorial. In particular: (i) Introduction; (ii) Transistor models capable to provide performance and power consumption tradeoffs; (iii) Low voltage
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Computer Design and Technology Assignment 2 Basic CMOS concepts We will now see the use of transistor for designing logic gates. Further down in the course we will use the same transistors to design other blocks (such as flip-flops or memories) Ideally‚ a transistor behaves like a switch. For NMOS transistors‚ if the input is a 1 the switch is on‚ otherwise it is off. On the other hand‚ for the PMOS‚ if the input is 0 the transistor is on‚ otherwise the transistor is off. Here is a graphical representation
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A New Design Technique of Reversible Gates using Pass Transistor Logic Md. Sazzad Hossain1‚ Md. Minul Hasan1‚ Md. Motiur Rahman1‚ A. S. M. Delowar Hossain1‚ Ziaul Haque2 1 Computer Science & Engineering‚ Mawlana Bhashani Science and Technology University 1 Santosh‚ Tangail-1902‚ Bangladesh University Grants Commission of Bangladesh Email: sazzad_101@yahoo.com‚ x.rajib.x@gmail.com 2 Abstract - In this paper‚ we propose a new design technique of reversible gates with N-MOS based pass transistor
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Novel Analytical model for current-voltage characteristics and transconductance of undoped AlGaN/GaN MISHFET’s and performance comparison with different high-k dielectrics Rangababu Ganta1‚ Saptarsi Ghosh2 and Dhrubes Biswas1‚2 1Department of Electrical & Electronics Communication Engineering‚ IIT Kharagpur‚ Kharagpur -721302‚ India 2Advance Technology Development Center‚ IIT Kharagpur‚ Kharagpur -721302‚ India E-mail: rangababu.ganta@gmail.com Abstract. In this paper an improved charge
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3 Failure Mechanism of Semiconductor Devices Contents 3.1 Reliability Factor and Failure Mechanism of Semiconductor Devices 3- 1 3.1.1 Reliability factors 3- 1 3.1.2 Failure factors and mechanisms of semiconductor devices 3- 4 3.2 Failure Mechanisms of Semiconductor Devices 3- 6 3.2.1 Time dependent dielectric breakdown (TDDB) 3- 6 3.2.2 Slow trap (NBTI) 3- 8 3.2.3 Hot carrier (AHC) 3-10 3.2.4 Soft error 3-12 3.2.5
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