approach’‚ John Wiley & Sons (2001). 1. ECE 426 MICROWAVE ENGINEERING AND ANTENNAS LABORATORY Credits 2 Periods Theory Tutorial Lab 4 Exam Hrs. Sessional Marks 50 Exam Marks 50 Total Marks 100 1) Measurement of VSWR 2) V-I Characteristics of GUNN Diode 3) Measurement of Coupling Factor and Directivity of a 4-Port directional coupler 4) Measurement of Microwave frequency 5) Reflex Klystron Characteristics 6) Radiation Pattern of Horn Antenna 7) Fiber Optic Analog Link 8) Fiber Optic Digital Link Other
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connected together‚ usually by soldering to a printed circuit board‚ to create an electronic circuit with a particular function (for example an amplifier‚ radio receiver‚ or oscillator). Components may be packaged singly (resistor‚ capacitor‚ transistor‚ diode etc.) or in more or less complex groups as integrated circuits (operational amplifier‚ resistor array‚ logic gate etc.) Components Very often electronic components are mechanically stabilized‚ improved in insulation properties and protected from
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independently tuning the effective Schottky barrier heights‚ a variety of reconfigurable device functionalities could be obtained. In particular‚ the same nanowire device could be configured to work as a Schottky barrier transistor‚ a Schottky diode or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one. Nanometer-scale electronic devices fabricated from silicon nanowires (SiNWs) are drawing significant attention in view
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Single Patch Microstrip Antenna Based on Koch and Sierpinski Fractal-shapes. Progress In Electromagnetics Research Letters.17‚ 95-103. Chiam‚ T. M.‚ L. C. Ong‚ Karim‚ M. F. and Guo‚ Y. X. (2009). 5.8GHz Circularly Polarized Rectennas Using Schottky Diode and LTC 5535 Rectifier for RF Energy Harvesting. Proc. of Asia Pacific Microwave Conference 2009. IEEE 66 The size of the rectenna is considered quite large. Surprisingly‚ the circuits are nice and well etched as fractals have complex designs. I am
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semiconductors are simple-element semiconductor materials such as silicon or germanium. Silicon is the most common semiconductor material used today. It is used for diodes‚ transistors‚ integrated circuits‚ memories‚ infrared detection and lenses‚ light-emitting diodes (LED)‚ photosensors‚ strain gages‚ solar cells‚
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circuits All of the current passes through each of the two identical bulbs‚ the energy supplied by the 1.5V potential difference is shared by the two bulbs‚ they are each less than normally bright. Parallel circuits The current splits at the junction in the circuit. The electrons deliver all of their energy to one or other of the bulbs. Both bulbs obtain the full 1.5V potential difference of the battery‚ they are each normally bright. The effects of an electric current An electric current
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power‚ a transistor can amplify a signal. Today‚ some transistors are
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LM317‚ NCV317 1.5 A Adjustable Output‚ Positive Voltage Regulator The LM317 is an adjustable 3−terminal positive voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to set the output voltage. Further‚ it employs internal current limiting‚ thermal shutdown and safe area compensation‚ making it essentially blow−out proof. The LM317 serves a wide variety
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1. INTRODUCTION Energy plays an important role in human activities. The utilization of fossil fuel based energy resources has increased the impact on the global environmental issues such as CO2 emissions that contribute to global warming and a drastic climate changing. The need of exploitation of new sources such as renewable energy (RE) becomes crucial. The combination of multi-source renewable energies at the distribution stage and the proper energy management will definitely reducing the cost
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as compared to the MOSFET. * The disadvantage of the MESFET structure is the presence of the Schottky metal gate. * It limits the forward bias voltage on the gate to the turn-on voltage of the Schottky diode. * This turn-on voltage is typically 0.7 V for GaAs Schottky diodes. * The threshold voltage therefore must be lower than this turn-on voltage. * As a result it is more difficult to fabricate circuits containing a large number of enhancement-mode MESFET. Basic structure
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