11/24/2013 CLASSIFICATIONS of MATERIALS Semiconductor Theory a. Conductor b. Semiconductor c. Insulator • Number of valence electrons is 1-3 with very high conductivity • Number of valence electrons is 4 with intermediate conductivity • Number of valence electrons is 5-8 with very low conductivity Semiconductor Conductors • Has more electrons that are free to move • Supports charge carriers to flow • Support flow of electricity • Has very low resistance allowing
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Review for final 1. What is the device that allows AC to pass through an amplifier circuit while blocking DC? a. Regulator capacitor b. Coupling capacitor c. Rheostat d. Diode 2. Which amplifier has the BJT as the most commonly used amplifier? a. CC b. CB c. CE d. Op-amp 3. How do we determine the voltage gain of the common-emitter amplifier? a. Divide the AC collector resistance by the AC emitter resistance b. Divide the AC collector resistance by the AC base resistance c. Divide the AC emitter
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BASIC DIODE ELECTRONICS INTRODUCTION TO DIODES The p-n Junction The p-n junction is a homojunction between a p-type and an n-type semiconductor. It acts as a diode‚ which can serve in electronics as a rectifier‚ logic gate‚ voltage regulator (Zener diode)‚ switching or tuner (varactor diode); and in optoelectronics as a light-emitting diode (LED)‚ laser diode‚ photodetector‚ or solar cell. In a relatively simplified view of semiconductor materials‚ we can envision a semiconductor as having two
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questions from part A and choose any 3 (three) questions from part B. Any form of cheating or attempt to cheat is a serious offence which may lead to dismissal. Electronics Part A (Answer all questions) ECE 1312 Q.1 [10 marks] 1. A PN junction is forward biased when: a. the applied potential causes the N-type material to be more positive than the P-type material b. the applied potential causes the N-type material to be more negative than the P-type material c. both materials are at the
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different regions‚ thickness and carrier diffusivities and diffusion lengths. Assume that there is no recombination in the neutral base or in the space-charge layers. Also‚ assume that the conventional reverse saturation current of the reverse-biased diode‚ IC0‚ is negligible. Assume that short-region approximation is valid in the base and that the bandgap narrowing in the emitter is important. No need to solve continuity equations and you can assume the expected carrier distributions. (12 marks)
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Normally‚ p–n junctions are manufactured from a single crystal with different dopant concentrations diffused across it. In the case of solar cells‚ polycrystalline silicon is often used to reduce expense‚ despite the lower efficiency caused by the grain boundaries. These boundaries are not related to the p–n junctions in the cell. If they would be the same spacially‚ the disturbing effects would make the solar cell useless. [edit] Properties of a p–n junction The p–n junction possesses some
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Transistor A transistor is a semiconductor device used to amplify and switch electronic signals. It is made of a solid piece of semiconductor material‚ with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor’s terminals changes the current flowing through another pair of terminals. Because the controlled (output) power can be much more than the controlling (input) power‚ the transistor provides amplification of a signal. Today
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IEEE Report on Advanced Sensors EC Department‚ GTU Gaurav Maniar‚ Karan Raithatha gaurav019@facebook.com karan.raithatha@gmail.com DIET‚ INDIA Abstract – This report explains different commonly used six advanced autonomous sensors. It also describes their working‚ application and uses. I. INTRODUCTION Simple stand alone electronic circuits can be made to repeatedly flash a light or play a musical note‚ but in order for an electronic circuit or system to perform any useful task or function
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DECLARATION We hereby declare that the project entitled “CELL PHONE BASED DEVICE CONTROL” submitted for the B.Tech Degree is our original work and the project has not formed the basis for the award of any degree‚ associateship‚ fellowship or any other similar titles. Signature of the Students: Place: Date: i ISO 9001:2000 CERTIFIED INSTITUTE Gandhi Institute of Engineering & Technology GUNUPUR – 765 022‚ Dist: Rayagada (Odisha)‚ India (Approved by AICTE‚ Govt. of Orissa
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Lovely Professional University‚Punjab Format For Instruction Plan [for Courses with Lectures and Tutorials Course No ece201 Cours Title ELECTRONIC DEVICES AND CIRCUITS Course Planner ECE201 ELECTRONIC DEVICES AND CIRCUITS 15330 :: Ishan Luthra Text Book: Other Specific Book: Lectures Tutorial Practical Credits 3 1 0 1 JACOB MILLMAN & HALKIAS‚ INTEGRATED ELECTRONICS: ANALOG & DIGITAL CIRCUIT SYSTEMS‚ Mc GRAW HILL‚ 1991 EDITION‚ 41 PRINT‚ 2005. 2 1. ROBERT
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