Relay Technical Information Definition of Relay Terminology COIL (also referred to as primary or input) • Nominal Coil Voltage (Rated Coil Voltage) A single value (or narrow range) of source voltage intended by design to be applied to the coil or input. • Pick-Up Voltage (Pull-In Voltage or Must Operate Voltage) As the voltage on an unoperated relay is increased‚ the value at or below which all contacts must function (transfer). • Drop-Out Voltage (Release or Must Release Voltage) As the voltage
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Si4010-Key Fob-DK Si4010 K EY F O B D EVELOPMENT K IT U SER ’ S G UIDE 1. Key Fob Development Platform The Si4010 key fob development platform is a flexible platform for comfortably developing software and testing the whole system using the Silicon Laboratories software development IDE. The platform also allows programming of the NVM on chip. The kit has two versions: one for the 434 MHz band (P/N 4010-DKKF_434) and one for the 868 MHz band (P/N 4010-DKKF_868). 1.1. Kit Content Table 1. Kit
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-1- Office of the Chief General Manager Telecommunications Tamilnadu Circle‚ Chennai 600 002 No.RET/301-10/2012 dated @ Chennai the 18- 04-2013 BHARAT SANCHAR NIGAM LIMITED (A Government of India Enterprise) DIRECT RECRUITMENT FOR TELECOM TECHNICAL ASSISTANTS (TTA) Applications are invited from the eligible Indian citizens for the post of Telecom Technical Assistant (TTA) in the non-executive category in BSNL‚T.N.Circle. Selection of candidates will be through a Competitive Examination to
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elements. These residual elements were either present within the raw materials used in the production process e.g. iron ore and scrap steel additions‚ or they were added in the production process for a specific purpose‚ e.g. deoxidization by means of silicon or aluminium. Hence they are called residual elements to distinguish them from alloying elements that are deliberately added according to specified minimum amounts. The term “cleanliness” refers to the amounts of various phases such as oxides‚ sulphides
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type of modulator that the diodes are arranged like a ring. In balanced ring modulator‚ there are also transformers and the carrier. This type of modulator is like bridge modulator. However‚ the arrangement of the diodes are different from bridge rectifier either in clockwise or anticlockwise. For the operation of the balanced ring modulator‚ the output of the waveform produce by balanced ring modulator depends on the arrangement of the carrier. This is because the polarity of the carrier will affect
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MME 3210 Materials Processing Techniques Laboratory Assignment – Sand Casting of an Aluminium 13wt% Silicon Alloy 1) Process Attributes Waste shown yellow* Waste shown yellow* After taking part in the sand casting laboratory session it was made clear that the process possessed many advantages and disadvantage‚ both from the process itself and from the final part produced. Observing the process step by step it was noted that the tasks carried out by the operator were not very difficult
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Introduction: Computer Generations History of development of computers down the years is referred as Computer Generations. A generation refers to research and development done to improve the performance of computers. It also refers to the new technical breakthroughs and advancements in computers. A generation has significantly decreased the size of computers and increased the performance. With the increase in speed‚ power and memory and decrease in size‚ each generation has brought down the cost
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RFID BASED SECURED ACCESS SYSTEM USING 8051 MICROCONTROLLER (AT89C51) BY N.KALYANI (07241A0272) G.NAVYA CHOWDARY (07241A0282) CH.S.A.L.PAVANI (07241A0286) R.SANDHYA RATNA KUMARI (07241A02A0) CONTENTS 1. 2. 3. 4. ABSTRACT SCHEMATIC DIAGRAM CIRCUIT DESCRIPTION INTRODUCTION 4.1. RFID MODULE 4.2. MICROCONTROLLER 4.3. MAX 232 4.4. LCD 4.5. KEIL SOFTWARE 4.6. PROTEUS 5. COMPONENT DESCRIPTION 5.1. AT89C51 5.2. RFID MODULE 5.3. MAX 232 5.4.ISP PROGRAMMER 6. 7. CODING BIBILOGRAPHY
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transistor structure. Intel calls it generically 3D but technically it’s a Tri-Gate transistor. The traditional flat two-dimensional "planar" gate is replaced with a thin three-dimensional silicon fin that rises up vertically from the silicon substrate. The gate wraps around the fin (see image below). The current is controlled by using a gate on each of the three sides of the fin--two on each side and one across the top--rather than just one on top‚ as is the case with the 2D planar transistor. The additional
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circuit this way. It appeared that the 110 ohm resistor was in series with the parallel combination of the 330nF capacitor and the 1Mohm resistor. That was a little confusing because I had assumed that the capacitor would be in series after the bridge rectifier as in a capacitor-input filter. After a few attempts to sketch the rest of the diagram‚ we decided to use Multisim. Multisim was a very useful tool. It allowed us to use all of the components on the circuit‚ and‚ through trial and error‚ create a
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