(CZ) method. CZ ingot growth requires chunks of virgin polycrystalline silicon which are placed in a quartz crucible along with small quantities of elements called dopants - the most common of which are boron‚ phosphorus‚ arsenic and antimony. The materials are heated to a temperature above the melting point of silicon‚ 1420 degrees Celsius. Once the polycrystalline and dopant combination has been liquefied‚ a single silicon crystal‚ the seed‚ is positioned on top of the melt‚ barely touching the
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side-drive type with salient-pole and wobble (harmonic) designs. Polysilicon surface micromachining forms the basis of the micromotor fabrication process. In this process‚ LPCVD heavily phosphorus-doped polysilicon is used for the structural parts. LPCVD silicon nik d e is used for electrical isolation‚ and CVD low-temperature oxide is used as the sacrificial material. The fabrication process impacts the performance characteristics of the micromotor through the reproduction accuracy of the design geometry
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RCA clean. Introduction The manufacturing of a silicon integrated circuit (IC) requires 500-600 process steps‚ depending on the specific type of device. Most steps are performed as unit processes with the complete wafers before dicing them into individual chips. Approximately 30% of the steps are cleaning operations‚ which indicate the importance of cleaning and surface conditioning. The device performance‚ reliability and product yield of silicon circuits are critically affected by the presence
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typical example of bureaucratic interference in India is regarding the technology of growing ultra pure silicon crystals to make solar and other silicon cells that convert light into electricity. Two Indian Institute of Science scientists had developed the technology. In the early 80s‚ Mettur Chemicals (MetChem) in Mettur near Salem tried to install a pilot plant to make pure crystalline silicon as a
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Smart and modern materials Textiles Home Learning Project Year 8 Estelle Crossley Smart materials Smart materials have properties that react to changes in their environment. This means that one of their properties can be changed by temperature‚ light‚ pressure or electricity. This change is reversible and can be repeated many times. There are a range of different smart materials. Each offer different properties that can be changed. Modern materials with new properties are excellent
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[Date] [Date] mukul88 [company name] mukul88 [company name] Semiconductor industry: Reasons of slowdown and its future. A study Semiconductor industry: Reasons of slowdown and its future. A study INTRODUCTION The semiconductor industry lives - and dies - by simple creed: smaller‚ faster and cheaper. The benefit of being tiny is pretty simple: finer lines mean more transistors can be packed onto the same chip. The more transistors on a chip‚ the faster it can do its work. Thanks in
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bandied about to describe the new transistor structure. Intel calls it generically 3D but technically it’s a Tri-Gate transistor. The traditional flat two-dimensional "planar" gate is replaced with a thin three-dimensional silicon fin that rises up vertically from the silicon substrate. The gate wraps around the fin (see image below). The current is controlled by using a gate on each of the three sides of the fin--two on each side and one across the top--rather than just one on top‚ as is the case
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w w ap eP m e tr .X w om .c s er UNIVERSITY OF CAMBRIDGE INTERNATIONAL EXAMINATIONS International General Certificate of Secondary Education *9505164189* 0653/03 COMBINED SCIENCE May/June 2007 Paper 3 (Extended) 1 hour 15 minutes Candidates answer on the Question Paper. No Additional Materials are required. READ THESE INSTRUCTIONS FIRST Write your Centre number‚ candidate number and name on all the work you hand in. Write in dark blue or black pen
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Structure of the pressure sensor The structure of the polysilicon nanofilm pressure sensor is shown in Fig. 1. The basic principle of the pressure sensor is the four polysilicon nanofilm piezoresistors‚ deposited on the oxidized micromachining silicon diaphragm‚ are connected into Wheatstone bridge configuration. For constant voltage VB supply‚ the bridge output V0 is: equation(1) where Ri (i = 1–4) is the resistance of bridge resistors. Thermal drift for offset In Eq. (1)‚ the offset
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............ ............................................................................................................................................... (Total 5 marks) Page 1 of 4 Unit C2‚ C2.2.3 2. Bricks made from silica (silicon dioxide) are used to line furnaces that operate at high temperatures. Part of the structure of silica is shown in the diagram. Suggest and explain why silica is
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