Physical and Materials Constants Boltzmann ’s constant Electron charge Thermal voltage k q kT/q 1.38 x 10-23 1.6 x 10-19 0.026 (at T= 300 K) 1.12 (at T = 300 K) J/K C V Energy gap of silicon (Si) Eg eV Intrinsic carrier concentration of silicon (Si) ni 1.45 x 1010 (at T = 300 K) cm73 Dielectric constant of vacuum Dielectric constant of silicon (Si) Dielectric constant of silicon dioxide (SiO2 ) 60 8.85 x 10-14 F/cm ESi 11.7 x O F/cm 6.x 3.97 x EO F/cm Commonly Used Prefixes
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Computer Systems A Programmer’s Perspective This page intentionally left blank Computer Systems A Programmer’s Perspective Randal E. Bryant Carnegie Mellon University David R. O’Hallaron Carnegie Mellon University and Intel Labs Prentice Hall Boston Columbus Indianapolis New York San Francisco Upper Saddle River Amsterdam Cape Town Dubai London Madrid Milan Munich Paris Montreal Toronto Delhi Mexico City Sao Paulo Sydney Hong Kong Seoul Singapore Taipei Tokyo Editorial Director:
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