HX316C10F 4
HX318C10FB/4
HX316C10F/4
4GB 512M x 64-Bit DDR3-1600
CL10 240-Pin DIMM
SPECIFICATIONS
CL(IDD)
10 cycles
Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin)
37.5ns (min.)
Maximum Operating Power
TBD W*
UL Rating
94 V - 0
Operating Temperature
0o C to 85o C
Storage Temperature
-55o C to +100o C
*Power will vary depending on the SDRAM used.
DESCRIPTION
FEATURES
HyperX HX316C10F/4 is a 512M x 64-bit (4GB) DDR3-1600
CL10 SDRAM (Synchronous DRAM) 1Rx8 memory module,
•
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•
VDDQ = 1.5V (1.425V ~ 1.575V)
based on eight 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3-1600 at a low latency
•
800MHz fCK for 1600Mb/sec/pin
timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The
•
8 independent internal bank
JEDEC standard electrical and mechanical specifications are as follows:
•
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
•
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or
MRS]
•
Bi-directional Differential Data Strobe
•
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
•
On Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•
Asynchronous Reset
•
PCB : Height 1.180” (30.00mm), single sided component
Note: The PnP feature offers a range of speed and timing options to support the widest variety of processors and chipsets. Your maximum speed will be determined by your BIOS.
PnP JEDEC TIMING PARAMETERS:
•
•
•
DDR3-1600 CL10-10-10 @1.5V
DDR3-1333 CL9-9-9 @1.5V
DDR3-1066 CL7-7-7 @1.5V
Continued >>
HX316C10F/4
4GB 512M x 64-Bit DDR3-1600
CL10 240-Pin DIMM
SPECIFICATIONS
CL(IDD)
10 cycles
Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh
Command Time (tRFCmin)
260ns (min.)
Row Active Time (tRASmin)
37.5ns (min.)
Maximum Operating Power
TBD W*
UL Rating
94 V - 0
Operating Temperature
0o C to 85o C
Storage Temperature
-55o C to +100o C
*Power will vary depending on the SDRAM used.
DESCRIPTION
FEATURES
HyperX HX316C10F/4 is a 512M x 64-bit (4GB) DDR3-1600
CL10 SDRAM (Synchronous DRAM) 1Rx8 memory module,
•
JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
•
VDDQ = 1.5V (1.425V ~ 1.575V)
based on eight 512M x 8-bit DDR3 FBGA components. This module has been tested to run at DDR3-1600 at a low latency
•
800MHz fCK for 1600Mb/sec/pin
timing of 10-10-10 at 1.5V. Additional timing parameters are shown in the PnP Timing Parameters section below. The
•
8 independent internal bank
JEDEC standard electrical and mechanical specifications are as follows:
•
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
•
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•
8-bit pre-fetch
•
Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or
MRS]
•
Bi-directional Differential Data Strobe
•
Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
•
On Die Termination using ODT pin
•
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•
Asynchronous Reset
•
PCB : Height 1.180” (30.00mm), single sided component
Note: The PnP feature offers a range of speed and timing options to support the widest variety of processors and chipsets. Your maximum speed will be determined by your BIOS.
PnP JEDEC TIMING PARAMETERS:
•
•
•
DDR3-1600 CL10-10-10 @1.5V
DDR3-1333 CL9-9-9 @1.5V
DDR3-1066 CL7-7-7 @1.5V
Continued >>