Nano Electronics
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS
Vol. 11, No. 3, pp. 93-105, June 25, 2010
Invited Paper
pISSN: 1229-7607 eISSN: 2092-7592
DOI: 10.4313/TEEM.2010.11.3.093
Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics
Yong-Bin Kim
Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA Received April 26, 2010; Accepted May 3, 2010 Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called “Beyond CMOS Devices,” are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies. Keywords: Nanoscale complementary metal-oxide-semiconductor, Scaling, Small-geometry effects, Short channel effects, Silicon-on-insulator technology, Nanoelectronics
1. INTRODUCTION
The relentless evolution of electronics,
Vol. 11, No. 3, pp. 93-105, June 25, 2010
Invited Paper
pISSN: 1229-7607 eISSN: 2092-7592
DOI: 10.4313/TEEM.2010.11.3.093
Challenges for Nanoscale MOSFETs and Emerging Nanoelectronics
Yong-Bin Kim
Department of Electrical and Computer Engineering, Northeastern University, Boston, MA 02115, USA Received April 26, 2010; Accepted May 3, 2010 Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main key for continuous progress in silicon-based semiconductor industry over the past three decades. However, as the technology scaling enters nanometer regime, CMOS devices are facing many serious problems such as increased leakage currents, difficulty on increase of on-current, large parameter variations, low reliability and yield, increase in manufacturing cost, and etc. To sustain the historical improvements, various innovations in CMOS materials and device structures have been researched and introduced. In parallel with those researches, various new nanoelectronic devices, so called “Beyond CMOS Devices,” are actively being investigated and researched to supplement or possibly replace ultimately scaled conventional CMOS devices. While those nanoelectronic devices offer ultra-high density system integration, they are still in a premature stage having many critical issues such as high variations and deteriorated reliability. The practical realization of those promising technologies requires extensive researches from device to system architecture level. In this paper, the current researches and challenges on nanoelectronics are reviewed and critical tasks are summarized from device level to circuit design/CAD domain to better prepare for the forthcoming technologies. Keywords: Nanoscale complementary metal-oxide-semiconductor, Scaling, Small-geometry effects, Short channel effects, Silicon-on-insulator technology, Nanoelectronics
1. INTRODUCTION
The relentless evolution of electronics,
References: Trans. Electr. Electron. Mater. 11(3) 93 (2010): Y.-B. Kim [61] V Trans. Electr. Electron. Mater. 11(3) 93 (2010): Y.-B. Kim valli, G