Projectreport Sneh
Weak localization correction in conductivity for a particle in a magnetic field
Summer Internship Project Report
By:
Sneh Pratik,
Department of Physics,
Indian Institute of Technology, Kharagpur
India
Anurag
Department of Physics,
Indian Institute of Technology, Kharagpur
India
Under the guidance of :
Prof. Ivan Shelykh,
Division of Physics and Applied Physics,
School of Physical and Mathematical Sciences,
NTU Singapore
Anastasia Pervishko
Division of Physics and Applied Physics,
School of Physical and Mathematical Sciences,
NTU Singapore
May – June, 2014
Nanyang Technological University, Singapore
Acknowledgement:
The satiation and euphoria that accompany the completion of the project would be incomplete without the mention of those who made it possible.
I would like to thank and express my deep sense of gratitude to my mentors Prof. Ivan
Shelykh and Anastasia Pervishko. I am greatly indebted to both of them for providing their valuable guidance at all stages of the study, their advice, constructive suggestions, positive and supportive attitude and continuous encouragement. Above all, I would like to thank them for providing me this opportunity to learn something new. I would also take this opportunity to thank my family members in Singapore, who always stood behind in case of any help and need, and my parents for constantly motivating me.
I hope that I can build upon the knowledge and experience that I have gained to learn and achieve more in this field.
Weak localization is a physical effect which occurs in disordered electronic systems at very low temperatures. The effect manifests itself as a positive correction to the resistivity of a metal or semiconductor. The effect is quantum-mechanical in nature and has the following origin: In a disordered electronic system, the electron motion is diffusive rather than ballistic. That is, an electron does not move along a straight line, but experiences a series of random scatterings off impurities which
Summer Internship Project Report
By:
Sneh Pratik,
Department of Physics,
Indian Institute of Technology, Kharagpur
India
Anurag
Department of Physics,
Indian Institute of Technology, Kharagpur
India
Under the guidance of :
Prof. Ivan Shelykh,
Division of Physics and Applied Physics,
School of Physical and Mathematical Sciences,
NTU Singapore
Anastasia Pervishko
Division of Physics and Applied Physics,
School of Physical and Mathematical Sciences,
NTU Singapore
May – June, 2014
Nanyang Technological University, Singapore
Acknowledgement:
The satiation and euphoria that accompany the completion of the project would be incomplete without the mention of those who made it possible.
I would like to thank and express my deep sense of gratitude to my mentors Prof. Ivan
Shelykh and Anastasia Pervishko. I am greatly indebted to both of them for providing their valuable guidance at all stages of the study, their advice, constructive suggestions, positive and supportive attitude and continuous encouragement. Above all, I would like to thank them for providing me this opportunity to learn something new. I would also take this opportunity to thank my family members in Singapore, who always stood behind in case of any help and need, and my parents for constantly motivating me.
I hope that I can build upon the knowledge and experience that I have gained to learn and achieve more in this field.
Weak localization is a physical effect which occurs in disordered electronic systems at very low temperatures. The effect manifests itself as a positive correction to the resistivity of a metal or semiconductor. The effect is quantum-mechanical in nature and has the following origin: In a disordered electronic system, the electron motion is diffusive rather than ballistic. That is, an electron does not move along a straight line, but experiences a series of random scatterings off impurities which
References: 1. Quantum Mechanics and Path Integrals, Richard P. Feynman, Albert R. Hibbs 2. Quantum Field Theory of Non-equilibrium States, Jorgen Rammer ( ( ( )) ) ]