Preview

semiconductors

Powerful Essays
Open Document
Open Document
9889 Words
Grammar
Grammar
Plagiarism
Plagiarism
Writing
Writing
Score
Score
semiconductors
EE2 Semiconductor Devices

Switching of bipolar devices

10 lectures – 5 classes
Dr. K. Fobelets
k.fobelets@imperial.ac.uk

Taken from www.necel.com/process/en/ux6b_90nm_bicmos.html

The course aims:

(1) To review the operation of diodes and bipolar junction transistors.
(2) To extend knowledge on bipolar devices to include the influence of recombination.
(3) To investigate the physical mechanisms underlying the delays and speed limitations of the devices.
(4) To extract equivalent circuit models for the devices.

Objectives:

Students should be able to
(1) Explain qualitatively the mechanisms of electronic conduction in bipolar devices, and calculate relevant quantities from given data.
(2) Calculate and explain DC current-voltage behaviour of diodes and BJTs, given their geometry and material properties.
(3) Explain the influence of excess minority carrier recombination of the performance of the devices.
(4) Explain the large signal behaviour of the devices from the internal storage of charge.

Recommended textbooks

EE1 background knowledge on semiconductors and semiconductor devices is required. The EE1 course notes can be found on blackboard.
It is strongly recommended that you read these notes in order to understand the basic principles of semiconductor devices.

“Solid State Electronic Devices”, B.G. Streetman & S. K. Banerjee, Prentice Hall International Editions, 6th ed. This is a more expensive book but the course is based on this book. It contains a lot more than what is taught in the 1st and 2nd year.

“Microelectronic Devices”, K.D. Leaver, IC Press, 2nd ed. This is a compact and relatively inexpensive book which covers all the essentials.

Note that in popular books such as “Microelectronics circuits” by Sedra & Smith some very brief descriptions of semiconductor device operation can be found. Whilst previous two books are very physics oriented, this book is more oriented

You May Also Find These Documents Helpful

  • Satisfactory Essays

    2. To predict and verify electrical characteristics of a series circuit using Ohm’s Law and Kirchhoff’s Voltage Law.…

    • 732 Words
    • 3 Pages
    Satisfactory Essays
  • Good Essays

    Eece 352notes

    • 2179 Words
    • 9 Pages

    • • • • Diffusion and drift currents Current continuity PN Junctions Diodes, photodetectors, solar cells…

    • 2179 Words
    • 9 Pages
    Good Essays
  • Powerful Essays

    Ap Physics B and C Study Guide

    • 51117 Words
    • 205 Pages

    3-14. 3-15. 3-16. 3-17. 3-18. 3-19. 3-20. 3-21. 3-22. 3-23. Electric Charge, Force, and Fields Gauss’s Law Electric Potential Capacitance Current, Resistance, and DC Circuits RC circuits Magnetic Fields Ampère’s Law Faraday’s Law Inductance, RL, and LC Circuits B and C course C course only B and C course B and C course B and C course C course only B and C course C course only B and C course C course only…

    • 51117 Words
    • 205 Pages
    Powerful Essays
  • Satisfactory Essays

    porple

    • 274 Words
    • 2 Pages

    Resources: University of Phoenix Material: Input, Processing and Output Devices and University of Phoenix Hardware Simulator…

    • 274 Words
    • 2 Pages
    Satisfactory Essays
  • Satisfactory Essays

    shottky diode

    • 671 Words
    • 3 Pages

    The Schottky diode also has a much higher current density than an ordinary PN junction. This…

    • 671 Words
    • 3 Pages
    Satisfactory Essays
  • Powerful Essays

    Yooooo

    • 3456 Words
    • 14 Pages

    All electronic materials are available on the student website and/or in the Course Materials Forum in your…

    • 3456 Words
    • 14 Pages
    Powerful Essays
  • Good Essays

    Solution

    • 21629 Words
    • 87 Pages

    15) The reverse saturation current of a diode will just about ________ for every 10°C rise in the diode temperature.…

    • 21629 Words
    • 87 Pages
    Good Essays
  • Good Essays

    Tunnel Diode

    • 743 Words
    • 3 Pages

    For the degenerated semiconductors, the energy band diagram at thermal equilibrium is presented in Figure 2. In Figure 3 the tunneling processes in different points of the currentvoltage characteristic for the tunnel diode are presented.…

    • 743 Words
    • 3 Pages
    Good Essays
  • Powerful Essays

    Electrical Technology

    • 90573 Words
    • 363 Pages

    As an open and collaboratively developed text, this book is distributed in the hope that…

    • 90573 Words
    • 363 Pages
    Powerful Essays
  • Better Essays

    3d Transistor

    • 1090 Words
    • 5 Pages

    There's no denying that the future of computing lies in small, low-power solutions coupled with big-iron cloud services. With 3D transistors, Intel may finally have the ammunition it needs to do battle in the smart phone and tablet markets. Intel made one its most significant technology announcement ever by stating it will base upcoming processors on 3D transistors. This announcement will drive its chip development over the next several years. This non-planar transistor architecture will be used by Intel Corporation in Ivy Bridge processors.…

    • 1090 Words
    • 5 Pages
    Better Essays
  • Satisfactory Essays

    Semiconductors – p and n type – Effective mass of hole and electron – direct and…

    • 458 Words
    • 2 Pages
    Satisfactory Essays
  • Satisfactory Essays

    Introduction to Microelectronic Fabrication Lecture 1 January 11th, 2006  Brief overview of microelectronic fabrication •Dominant material: Silicon •Technology size •MOSFET fabrication •Safety Dominant material: Silicon  Obtaining ultrapure Si (other technology) Robert F. Pierret, Semiconductor Device Fundamentals, p.17  Single-crystal formation • Bridgmann method • Czochralski method USNA (lecture notes), http://www.usna.edu/EE/ee452/LectureNotes/05-Processing_Technology/15, 10/03/04 Dominant material: Silicon  Advantages of Si in fabrication • Easily oxidized to form SiO2 • SiO2 acts as a “good” barrier layer • Other barrier materials: Si3N4, photoresist, metals, etc Technology size  Wafer size increases • Wafer must be thicker • Diminish the production cost • Yield is higher Richard C. Jaeger, Introduction to Microelectronic Fabrication, p.3 Technology roadmap  Reduce the size of devices • Increase the number of devices per wafer UMC, http://www.umc.com.tw/english/process/a.asp MOSFET fabrication   Metal-oxide-semiconductor field-effect transistor (MOSFET)…

    • 695 Words
    • 12 Pages
    Satisfactory Essays
  • Powerful Essays

    Basic Electronics

    • 4088 Words
    • 17 Pages

    When a section of p-type material and a section of n-type material are brought in contact to form a pn junction, a number of interesting properties arise. The pn junction forms the basis of the semiconductor diode. Electrons and holes diffuse from areas of high concentration toward areas of low concentration. Thus, electrons diffuse from the n-region to the p-region., leaving behind positively charged ionized donor atoms. In the p-region the electrons recombine with the abundant holes. Similarly, holes diffuse from the p-region into the n-region, leaving behind negatively charged ionized acceptor atoms. In the n-region the holes recombine with the abundant mobile electrons. This diffusion process does not continue…

    • 4088 Words
    • 17 Pages
    Powerful Essays
  • Better Essays

    Semiconductors are of great interest as they allow a material’s conductivity/resistivity to be manipulated. Due to the Pauli exclusion principle, a filled valence band cannot carry a current. Thus, in a semiconductor, electrons must be either added to the conduction band or removed from the valence band in order for current to flow. This can be done by increasing the temperature or by “doping”.…

    • 831 Words
    • 4 Pages
    Better Essays
  • Good Essays

    Physics

    • 1315 Words
    • 6 Pages

    Q. 6. Define ‘dielectric constant’ of a medium. Briefly explain why the capacitance of a parallel plate capacitor increases, oii introducing a dielectric medium between the plates. 2 Q. 7. Why does a paramagnetic substance display greater magnetisation for the same magnetising field when cooled? How does a diamagnetic substance respond to similar temperature changes? 2 Q. 8. Explain how electron mobility changes for a good conductor when (i) the temperature of the conductor is decreased at constant potential difference and (ii) applied potential difference is doubled at constant temperature. 2 Q. 9. A capacitor and a resistor are connected in series with an a.c.…

    • 1315 Words
    • 6 Pages
    Good Essays